C# Class Emlid.WindowsIot.Hardware.Components.Mb85rcv.Mb85rc256vDevice

The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 10^12 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC256V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.

Data sheet: https://www.fujitsu.com/us/Images/MB85RC256V-DS501-00017-3v0-E.pdf